GaN tunnel junction as a current aperture in a blue surface-emitting light-emitting diode

被引：26

作者：

Jeon, SR

Oh, CS

Yang, JW

Yang, GM ^{[1
]}

Yoo, BS

机构：

[1] Chonbuk Natl Univ, Dept Semicond Sci & Technol, Chonju 561756, South Korea

[2] Chonbuk Natl Univ, Semicond Phys Res Ctr, Chonju 561756, South Korea

[3] Elect & Telecommun Res Inst, Telecommun Basic Res Lab, Yuseong Gu 305350, Daejeon, South Korea

[4] Optowell Co Ltd, Chonju 561756, South Korea

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 11期

关键词：

D O I：

10.1063/1.1459487

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated surface-emitting GaN-based diodes with a buried tunnel junction (TJ) current aperture. The current confinement aperture for lateral injection current was defined by mesa etch of a TJ structure and regrowth of current blocking layer surrounding the TJ mesa. Lateral electron current drives a tunnel contact junction providing hole injection into the active region. The very uniform light emission just through a buried TJ aperture represents that the buried TJ structure acts very effectively as a confinement aperture of lateral current injection, particularly in GaN-based vertical-cavity surface-emitting lasers. (C) 2002 American Institute of Physics.

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页码：1933 / 1935

页数：3

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