Design of InGaN/GaN/AlGaN VCSELs using the effective frequency method

被引：19

作者：

Smolyakov, GA ^{[1
]}

Smagley, VA ^{[1
]}

Nakwaski, W ^{[1
]}

Eliseev, PG ^{[1
]}

Osinski, M ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VII | 1999年 / 3625卷

关键词：

VCSELs; effective frequency method; semiconductor laser design; group-III nitrides; optoelectronic device simulation;

D O I：

10.1117/12.356891

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The effective frequency method is applied to analyze complex optical structures of nitride-based intracavity-contacted VCSELs. Numerical results indicate that higher-order lateral modes would be favored in nitride-based intracavity-contacted VCSELs due to strong current-crowding effect. A semi-transparent contact design is proposed to provide more uniform gain distribution within the active region and maintain lasing in the fundamental lateral made.

引用

页码：324 / 335

页数：12

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