Improvement of current injection uniformity and device resistance in long-wavelength vertical-cavity surface-emitting laser using a tunnel junction

被引：14

作者：

Sekiguchi, S ^{[1
]}

Miyamoto, T ^{[1
]}

Kimura, T ^{[1
]}

Okazaki, G ^{[1
]}

Koyama, F ^{[1
]}

Iga, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 7A期

关键词：

long-wavelength VCSEL; tunnel junction; injection current uniformity; resistance network model; metalorganic chemical vapor deposition; carbon-doped aluminum arsenide;

D O I：

10.1143/JJAP.39.3997

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A uniform current injection is important in long-wavelength vertical-cavity surface-emitting lasers (VCSELs) for low-threshold, high-efficiency, and stable-mode operation. The utilization of a tunnel junction can solve these problems by employing an n-type highly conductive material for an anode. In this study, the electrical property of a long-wavelength VCSEL with a tunnel junction is analyzed using an equivalent circuit model. The optical absorption loss of a tunnel-junction-embedded VCSEL is also investigated. This results in the quantitative estimation of lasers with a tunnel junction in terms of device resistance, carrier distribution in the active region and optical absorption loss. The introduction of a tunnel junction may improve the output power, power-conversion efficiency, and mode stability of long-wavelength VCSELs.

引用

页码：3997 / 4001

页数：5

共 19 条

[1] NEAR ROOM-TEMPERATURE CONTINUOUS-WAVE LASING CHARACTERISTICS OF GAINASP/INP SURFACE-EMITTING LASER [J].

BABA, T ;

YOGO, Y ;

SUZUKI, K ;

KOYAMA, F ;

IGA, K .

ELECTRONICS LETTERS, 1993, 29 (10) :913-914

[2] 1-mW CW-RT monolithic VCSEL at 1.55 μm [J].

Boucart, J ;

Starck, C ;

Gaborit, F ;

Plais, A ;

Bouché, N ;

Derouin, E ;

Goldstein, L ;

Fortin, C ;

Carpentier, D ;

Salet, P ;

Brillouet, F ;

Jacquet, J .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (06) :629-631

[3] VARIATION OF INTERVALENCE BAND ABSORPTION WITH HOLE CONCENTRATION IN P-TYPE INP [J].

CASEY, HC ;

CARTER, PL .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :82-83

[4]

Casey Jr H. C., 1978, HETEROSTRUCTURE LASE

[5] Room-temperature, electrically-pumped multiple-active-region VCSELs with high differential efficiency at 1.55μm [J].

Kim, JK ;

Hall, E ;

Sjölund, O ;

Almuneau, G ;

Coldren, LA .

ELECTRONICS LETTERS, 1999, 35 (13) :1084-1085

[6]

KOTAKI Y, 1984, 16 C SOL STAT DEV MA, P133

[7] LOW-THRESHOLD VOLTAGE VERTICAL-CAVITY SURFACE-EMITTING LASER [J].

LEAR, KL ;

CHALMERS, SA ;

KILLEEN, KP .

ELECTRONICS LETTERS, 1993, 29 (07) :584-586

[8] Submilliamp long wavelength vertical cavity lasers [J].

Margalit, NM ;

Babic, DI ;

Streubel, K ;

Mirin, RP ;

Naone, RL ;

Bowers, JE ;

Hu, EL .

ELECTRONICS LETTERS, 1996, 32 (18) :1675-1677

[9] CARRIER TRANSPORT IN P-TYPE GAINASP/INP DISTRIBUTED BRAGG REFLECTORS [J].

MIYAMOTO, T ;

MORI, K ;

MAEKAWA, H ;

INABA, Y ;

KOYAMA, F ;

IGA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (08) :4614-4616

[10]

MIYAMOTO T, 1995, CLEO PAC RIM 95 CHIB

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