CARRIER TRANSPORT IN P-TYPE GAINASP/INP DISTRIBUTED BRAGG REFLECTORS

被引：5

作者：

MIYAMOTO, T

MORI, K

MAEKAWA, H

INABA, Y

KOYAMA, F

IGA, K

机构：

[1] Tokyo Institute of Technology, Precision and Intelligence Laboratory, Midori-ku, Yokohama, 227

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 08期

关键词：

DISTRIBUTED BRAGG REFLECTOR; GAINASP/INP; SURFACE-EMITTING LASER; CURRENT-VOLTAGE CHARACTERISTICS; HOLE TUNNELING CURRENT; CHEMICAL BEAM EPITAXY;

D O I：

10.1143/JJAP.33.4614

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The current-voltage characteristic of a p-type GaInAsP/InP distributed Bragg reflector (DBR) is theoretically and experimentally investigated. It is pointed out that the light hole tunneling current is dominant in the reverse bias condition. Highly selective p-doping in InP is effective to reduce the excess bias in the DBR. Experimentally, an excess bias of 0.5 V is observed for a five-pair GaInAsP (lambda(g) = 1.45 mu m)/InP DBR grown by chemical beam epitaxy.

引用

收藏

页码：4614 / 4616

页数：3

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