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VERY LOW THRESHOLD CURRENT-DENSITY IN VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODES WITH PERIODICALLY DOPED DISTRIBUTED BRAGG REFLECTORS

被引：35
作者：
SUGIMOTO, M
KOSAKA, H
KURIHARA, K
OGURA, I
NUMAI, T
KASAHARA, K
机构：
[1] Optoelectronics Research Laboratories, NEC Corporation, Tsukuba 305
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 04期
关键词：
SEMICONDUCTOR LASERS; LASERS; INTEGRATED OPTICS;
D O I：
10.1049/el:19920241
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new periodically doped distributed Bragg reflector is examined. This new structure is expected to reduce the electrical resistivity without optical absorption increase. A very low threshold current density of 450A/cm2 is obtained in vertical-cavity surface-emitting lasers with periodically doped distributed Bragg reflectors.
引用
收藏
页码：385 / 387
页数：3
相关论文
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