LOW-THRESHOLD VOLTAGE VERTICAL-CAVITY SURFACE-EMITTING LASER

被引：18

作者：

LEAR, KL

CHALMERS, SA

KILLEEN, KP

机构：

[1] Sandia National Laboratories, Photonics Research Department, Albuquerque, NM 87185-5800, 1312

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 07期

关键词：

LASERS; SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19930392

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical-cavity surface emitting laser diodes with threshold voltages as low as 1.48 V are demonstrated. The devices have low-resistance epitaxial mirrors, and current passes through the entire mirror stack. The low threshold voltage results from both low threshold current densities and mirrors with low resistivities even at low current densities. The laser fabrication sequence is relatively quick and simple and allows for the rapid characterisation of vertical-cavity surface-emitting laser material.

引用

页码：584 / 586

页数：3

共 8 条

[1] CHALMERS SA, IN PRESS APPL PHYS L
[2] INGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS
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[8] VERY LOW THRESHOLD CURRENT-DENSITY IN VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODES WITH PERIODICALLY DOPED DISTRIBUTED BRAGG REFLECTORS
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