WIDE OPERATING WAVELENGTH RANGE AND LOW THRESHOLD CURRENT IN0.24GA0.76AS GAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS

被引:14
作者
SALE, TE
WOODHEAD, J
GREY, R
ROBSON, PN
机构
[1] Department of Electronic and Electrical Engineering, The University of Sheffield
关键词
D O I
10.1109/68.166938
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report very low threshold current density operation of triple quantum well vertical-cavity surface-emitting lasers (VCSEL's). The active wells are strained In0.24Ga0.76As in GaAs. Devices from the same wafer operate at room temperature over a wavelength range of 958-1042 nm, with a minimum threshold current density of 366 A . cm-2 at 1018 nm. The dependence of threshold current on wavelength gives an insight into the optical gain spectrum of the quantum wells. 50 mum diameter devices operate CW without heatsinking.
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页码:1192 / 1194
页数:3
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