A SIMPLE WAY TO REDUCE SERIES RESISTANCE IN P-DOPED SEMICONDUCTOR DISTRIBUTED BRAGG REFLECTORS

被引：31

作者：

HONG, M

MANNAERTS, JP

HONG, JM

FISCHER, RJ

TAI, K

KWO, J

VANDENBERG, JM

WANG, YH

GAMELIN, J

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] UNIV CALIF BERKELEY,DEPT ELECT ENGN,BERKELEY,CA 94720

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)91135-W

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A novel method has been used to smooth out the energy band discontinuity at the heterojunction of AlAs and GaAs in quarter-wave distributed Bragg reflectors (DBRs) by linearly grading the Al and Ga compositions. This has been achieved by simply varying the cell temperatures of Al and Ga. No shutter operation was used during the MBE growth of these DBR mirrors. Low series resistance at a moderate doping (3 x 10(18) cm-3) and high optical reflectivity have been obtained in the p-type DBRs using our approach. These p-DBRs were characterized by high-resolution X-ray diffraction, optical reflectivity, and electrical measurements.

引用

页码：1071 / 1075

页数：5

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