Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts

被引：76

作者：

Lin, YC ^{[1
]}

Chang, SJ

Su, YK

Tsai, TY

Chang, CS

Shei, SC

Hsu, SJ

Liu, CH

Liaw, UH

Chen, SC

Huang, BR

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] S Epitaxy Corp, Hsin Shi 744, Taiwan

[4] Nan Jeon Jr Coll Technol & Commerce, Dept Elect Engn, Yan Hsui 737, Taiwan

[5] Chin Min Coll, Dept Elect Engn, To Fen 351, Taiwan

[6] Natl Yunlin Univ Sci & Technol, Dept Elect Engn, Touliu 640, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2002年 / 14卷 / 12期

关键词：

GaN; light-emitting diode (LED); Ni-indium tin oxide (ITO); transparent contact;

D O I：

10.1109/LPT.2002.804649

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The optical and electrical properties of Ni(5 nm)-Au(5 nm) and Ni(3.5 nm)-indium tin oxide (ITO) (60 nm) films were studied. It was found that the normalized transmittance of Ni/ITO film could reach 87% at 470 nm, which was much larger than that of the Ni-Au film. It was also found that the specific contact resistance was 5 x 10(-4) Omega (.) cm(2) and I x 10(-3) Omega (.) cm(2), respectively, for Ni-Au and Ni/ITO on p-GaN. Furthermore, it was found that the 20 mA output power of light-emitting diode (LED) with Ni-Au p-contact layer was 5.26 mW. In contrast, the output power could reach 6.59 mW for the LED with Ni/ITO p-contact layer.

引用

页码：1668 / 1670

页数：3

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