InGaN-GaN multiquantum-well blue and green light-emitting diodes

被引：258

作者：

Chang, SJ ^{[1
]}

Lai, WC

Su, YK

Chen, JF

Liu, CH

Liaw, UH

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Nan Jeon Inst Technol, Dept Elect Engn, Yan Hsui 737, Taiwan

[4] Chin Min Coll, Dept Elect Engn, To Fen 351, Taiwan

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2002年 / 8卷 / 02期

关键词：

DCXRD; EL; InGaN-GaN; MQW; PL;

D O I：

10.1109/2944.999181

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaN-GaN multiquantum-well (MQW) blue and green light-emitting diodes (LEDs) were prepared by organometallic vapor phase epitaxy, and the properties of these LEDs were evaluated by photoluminescence (PL), double crystal X-ray diffraction, and electroluminescence (EL) measurements. It was found that there were only small shifts observed in PL and EL peak positions of the blue MQW LEDs when the number of quantum well (QW) increased. However, significant shifts in PL and EL peak positions were observed in green MQW LEDs when the number of QW increased. It was also found that there was a large blue shift in EL peak position under high current injection in blue MQW LEDs. However, the blue shift in green MQW LEDs was negligibly small when the injection current was large. These observations could all be attributed to the rapid relaxation in green MQW LEDs since the In composition ratio in the InGaN well was high for the green MQW LEDs. The forward voltage V-f of green MQW LEDs was also found to be larger than that of blue MQW LDDs due to the same reason.

引用

页码：278 / 283

页数：6

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