High brightness InGaN green LEDs with an ITO on n++-SPS upper contact

被引：25

作者：

Chang, CS ^{[1
]}

Chang, SJ

Su, YK

Kuo, CH

Lai, WC

Lin, YC

Hsu, YP

Shei, SC

Tsai, JM

Lo, HM

Ke, JC

Shen, JK

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan

[2] S Epitaxy Corp, Hsinshi, Taiwan

[3] Natl Cent Univ, Ctr Opt Sci, Chungli 320, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 11期

关键词：

GaN; green light-emitting diode (LED); indium tin oxide (ITO); short-period superlattice (SPS);

D O I：

10.1109/TED.2003.819091

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Indium tin oxide (ITO) (260 nm) and Ni (5 nm)/Au (10 nm) films were deposited onto glass substrates, p-GaN layers, n(+)-InGaN/GaN short-period-superlattice (SPS), n(++)-SPS and nitride-based green light-emitting diodes (LEDs). It was found that ITO could provide us an extremely high transparency (i.e., 95 % at 520 nm). Itwasalsofound that the 1.03 x 10(-3) Omegacm(2) specific contact resistance of ITO on n(++)-SPS was reasonably small. Although forward voltage of the LED with ITO on n(++)-SPS upper contact was slightly higher than that of the LED with Ni/Au on n(++)-SPS upper contact, 20 mA output power and external quantum efficiency of the green LED with ITO on n(++)-SPS upper contact could reach 4.98 mW and 8.2%, respectively, which were much larger than those observed from the green LED with Ni/Au on n(++)-SPS upper contact. The reliability of ITO on n(++)-SPS upper contact was also found to be reasonably good.

引用

页码：2208 / 2212

页数：5

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