InGaN/GaN light-emitting diodes with ITO p-contact layers prepared by RF sputtering

被引：38

作者：

Chang, CS ^{[1
]}

Chang, SJ

Su, YK

Lin, YC

Hsu, YP

Shei, SC

Chen, SC

Liu, CH

Liaw, UH

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] S Epitaxy Corp, Hsin Shi 744, Taiwan

[4] Natl Yunlin Univ Sci & Technol, Dept Elect Engn, Touliu, Yunlin, Taiwan

[5] Na Jeon Jr Coll Technol & Commerce, Dept Elect Engn, Yenshui 737, Taiwan

[6] Chin Min Coll, Dept Elect Engn, To Fen 351, Taiwan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2003年 / 18卷 / 04期

关键词：

D O I：

10.1088/0268-1242/18/4/102

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Indium tin oxide (250 nm) and Ni(5 nm)/Au(10 nm) films were successfully deposited onto both glass substrates and p-GaN epitaxial layers. The normalized transmittance of the as-deposited ITO film was 90.6% at 450 nm, which was much larger than that of Ni/Au film. The transmittance of the RF sputtered ITO film could be increased to 97.8% with in situ annealing. In situ annealing of ITO films would also improve the electrical properties of ITO on p-GaN. Nitride-based light-emitting diodes (LEDs) were also fabricated. It was found that the 20 mA forward voltage was 3.16 V, 5.74 V and 4.28 V for the LEDs with Ni/Au, as-deposited ITO and in situ annealed ITO p-contact layer, respectively.

引用

页码：L21 / L23

页数：3

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