InGaN/GaN light emitting diodes activated in O2 ambient

被引：53

作者：

Kuo, CH ^{[1
]}

Chang, SJ

Su, YK

Chen, JF

Wu, LW

Sheu, JK

Chen, CH

Chi, GC

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan

[3] S Epitaxy Corp, Tainan 744, Taiwan

[4] Natl Cent Univ, Ctr Opt Sci, Chungli 320, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 05期

关键词：

InGaN/GaN; LED; Mg activation; oxygen annealing;

D O I：

10.1109/55.998863

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Mg-doped GaN epitaxial layers were annealed in pure O-2 and pure N-2. It was found that we could achieve a low-resistive p-type GaN by pure O-2 annealing at a temperature as low as 400 degreesC. With a 500 degreesC annealing temperature, it was found that the forward voltage and dynamic resistance of the InGaN/GaN light emitting diode (LED) annealed in pure O-2 were both smaller than those values observed from InGaN/GaN LED annealed in pure N-2. It was also found that an incomplete activation of Mg will result in a shorter LED lifetime.

引用

页码：240 / 242

页数：3

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