Effect of oxygen on the activation of Mg acceptor in GaN epilayers grown by metalorganic chemical vapor deposition

被引：17

作者：

Chung, SH ^{[1
]}

Lachab, M

Wang, T

Lacroix, Y

Basak, D

Fareed, Q

Kawakami, Y

Nishino, K

Sakai, S

机构：

[1] Univ Tokushima, Satellite Venture Business Lab, Tokushima 7708506, Japan

[2] Univ Tokushima, Dept Elect & Elect Engn, Tokushima 7708506, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 08期

关键词：

Mg-doped GaN; metalorganic chemical vapor deposition; p-type activation; oxygen effect; electrical characteristics;

D O I：

10.1143/JJAP.39.4749

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of oxygen mixed in nitrogen on p-type activation in Mg-doped GaN epilayers grown by metalorganic chemical vapor deposition (MOCVD) was investigated. The samples annealed in N-2/O-2 (1%) ambient exhibited the best electrical properties with respect to hole concentration. SIMS data suggested that oxygen reacted with hydrogen present in the Mg-doped GaN samples during the thermal annealing process, thereby enhancing the activation of Mg accepters.

引用

页码：4749 / 4750

页数：2

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