HIGHLY RELIABLE OPERATION OF INDIUM TIN OXIDE ALGAINP ORANGE LIGHT-EMITTING-DIODES

被引：47

作者：

LIN, JF ^{[1
]}

WU, MC ^{[1
]}

JOU, MJ ^{[1
]}

CHANG, CM ^{[1
]}

LEE, BJ ^{[1
]}

TSAI, YT ^{[1
]}

机构：

[1] IND TECHNOL RES INST,OPT ELECTR SYST LABS,HSINCHU 31015,TAIWAN

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 21期

关键词：

LIGHT EMITTING DIODES; RELIABILITY;

D O I：

10.1049/el:19941228

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Indium-tin oxide (ITO) transparent conducting films with a low resistivity of 2-3 x 10(-4)Omega.cm have been introduced as a window layer in (Al0.7Ga0.7)(0.5)In0.5P/(Al0.1Ga0.9)(0.5)In0.5P double-heterostructure orange light-emitting diodes to obtain a uniform spatial distribution of the emission light, a good device performance and high reliability. An output power of 450 mu W at 20mA corresponding to an external quantum efficiency of 1.1% for the 620nm emission can be achieved.

引用

页码：1793 / 1794

页数：2

共 3 条

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[3] HIGH-EFFICIENCY INGAALP VISIBLE LIGHT-EMITTING-DIODES [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (08) :2446-2451

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