NEW DOUBLE-HETEROSTRUCTURE INDIUM-TIN OXIDE INGAASP/ALGAAS SURFACE LIGHT-EMITTING-DIODES AT 650-NM RANGE

被引：9

作者：

ISHIKAWA, J

FUNYU, Y

YONEZAWA, R

TAKAGI, K

TAKAHASHI, NS

KURITA, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 05期

关键词：

D O I：

10.1063/1.344315

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2181 / 2185

页数：5

共 29 条

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