Stark tuning of donor electron spins in silicon

被引：63

作者：

Bradbury, F. R. ^{[1
]}

Tyryshkin, A. M.

Sabouret, Guillaume

Bokor, Jeff

Schenkel, Thomas

Lyon, S. A.

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] EO Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 97卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.97.176404

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report Stark shift measurements for Sb-121 donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on a Sb-implanted Si-28 epilayer are used to apply the electric fields. Two quadratic Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g factor. The hyperfine term prevails at magnetic fields of 0.35 T, while the g factor term is expected to dominate at higher magnetic fields. We discuss the results in the context of the Kane model quantum computer.

引用

页数：4

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