Possible trends for the growth of low scattering Nd:YVO4 laser crystals; Phase relations - Growth techniques

被引：30

作者：

Erdei, S ^{[1
]}

Jin, BM ^{[1
]}

Ainger, FW ^{[1
]}

Keszei, B ^{[1
]}

Vandlik, J ^{[1
]}

Suveges, A ^{[1
]}

机构：

[1] HUNGARIAN ACAD SCI,RES INST MAT SCI,BUDAPEST,HUNGARY

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 172卷 / 3-4期

基金：

匈牙利科学研究基金会; 美国国家科学基金会;

关键词：

D O I：

10.1016/S0022-0248(96)00765-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The Nd:YVO4 single crystal is one of the most promising laser hosts for micro and diode-pumped solid state lasers due to its outstanding laser characteristics. However, the growth difficulties encountered can significantly restrain its widespread high-tech applications. The inclusions which are mainly submicron size precipitates, and the color center problems commonly originate from the defects of valency states. The presence of non-pentavalent vanadium ions in the V2O5 starting material, the related valency defects in the YVO4 compound created by the reaction process, and the incongruent vaporization of vanadium oxides together with YVO4 melt will primarily determine the congruency as a typical off-stoichiometric effect. This work concludes that the simple Czochralski (CZ) growth technique cannot produce scattering-free and stoichiometric YVO4 crystals, nevertheless the top-seeded solution growth (TSSG) and liquid phase epitaxial (LPE) techniques provide possible alternatives for better quality crystal production Several specific aspects of the phase relations of YVO4 crystals prepared by CZ, TSSG and LPE techniques are surveyed in this paper.

引用

页码：466 / 472

页数：7

共 16 条

[1] CRYSTAL-GROWTH OF YVO4 USING THE LHPG TECHNIQUE [J].