Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars

被引：120

作者：

Henry, M. D. ^{[1
]}

Walavalker, S. ^{[1
]}

Homyk, A. ^{[1
]}

Scherer, A. ^{[1
]}

机构：

[1] CALTECH, Dept Appl Phys, Pasadena, CA 91125 USA

来源：

NANOTECHNOLOGY | 2009年 / 20卷 / 25期

基金：

美国国家科学基金会;

关键词：

PLASMAS;

D O I：

10.1088/0957-4484/20/25/255305

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We introduce using sputtered aluminum oxide (alumina) as a resilient etch mask for fluorinated silicon reactive ion etches. Achieving selectivity of 5000:1 for cryogenic silicon etching and 68:1 for SF(6)/C(4)F(8) silicon etching, we employ this mask for fabrication of high-aspect-ratio silicon micropillars and nanopillars. Nanopillars with diameters ranging from below 50 nm up to several hundred nanometers are etched to heights greater than 2 mu m. Micropillars of 5, 10, 20, and 50 mu m diameters are etched to heights of over 150 mu m with aspect ratios greater than 25. Processing and characterization of the sputtered alumina is also discussed.

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