Polythiophene-based field-effect transistors with enhanced air stability

被引：67

作者：

Ong, B ^{[1
]}

Wu, YL ^{[1
]}

Jiang, L ^{[1
]}

Liu, P ^{[1
]}

Murti, K ^{[1
]}

机构：

[1] Xerox Res Ctr Canada Ltd, Mississauga, ON L5K 2L1, Canada

来源：

SYNTHETIC METALS | 2004年 / 142卷 / 1-3期

关键词：

organic thin-film transistor; polythiophene; field-effect mobility; current on/off ratio;

D O I：

10.1016/j.synthmet.2003.07.004

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have demonstrated that relatively air stable field-effect transistors (TFTs) with mobility up to 0.01 cm(2)/V s, near-zero turn-on voltage, and current on/off ratio over 10(5) could be fabricated in entirety under ambient conditions with poly(3',4'-dialkyl-2,2'5',2"-terthiophene) as active channel layer. This class of polythiophenes, which comprise of regioregularly arranged 2,5-thienylene and disubstituted-2,5-thientylene moieties, have shown enhanced stability against p-doping by atmospheric oxygen. When exposed to atmospheric oxygen, the unprotected TFTs fabricated with these materials had exhibited significantly higher stability than those of regioregular poly(3-hexylthiophene)s under similar conditions. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：49 / 52

页数：4

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