1.5 mu m wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power

被引:75
作者
Garbuzov, D [1 ]
Xu, L [1 ]
Forrest, SR [1 ]
Menna, R [1 ]
Martinelli, R [1 ]
Connolly, JC [1 ]
机构
[1] DAVID SARNOFF RES CTR,PRINCETON,NJ 08543
关键词
semiconductor junction lasers; semiconductor quantum wells; optical losses;
D O I
10.1049/el:19961098
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Reduction of internal loss and a twofold increase of differential efficiency have been obtained for 1.5 mu m wavelength InGaAsP/InP separate confinement multiquantum well long cavity lasers with broadened waveguides. A record CW output power of 4.6W has been demonstrated for a laser with a 200 mu m aperture.
引用
收藏
页码:1717 / 1719
页数:3
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