1.5 mu m wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power

被引：75

作者：

Garbuzov, D ^{[1
]}

Xu, L ^{[1
]}

Forrest, SR ^{[1
]}

Menna, R ^{[1
]}

Martinelli, R ^{[1
]}

Connolly, JC ^{[1
]}

机构：

[1] DAVID SARNOFF RES CTR,PRINCETON,NJ 08543

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 18期

关键词：

semiconductor junction lasers; semiconductor quantum wells; optical losses;

D O I：

10.1049/el:19961098

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reduction of internal loss and a twofold increase of differential efficiency have been obtained for 1.5 mu m wavelength InGaAsP/InP separate confinement multiquantum well long cavity lasers with broadened waveguides. A record CW output power of 4.6W has been demonstrated for a laser with a 200 mu m aperture.

引用

页码：1717 / 1719

页数：3

共 8 条

[1]

BALLMAN AA, 1982, J CRYST GROWTH, V62, P198

[2]

GARBUZOV DZ, 1996, CLEO 96 C AN CA

[3]

GARBUZOVE DZ, 1996, SPIE, V2682, P20

[4] INTERVALENCE BAND ABSORPTION-COEFFICIENT MEASUREMENTS IN BULK LAYER, STRAINED AND UNSTRAINED MULTIQUANTUM-WELL 1.55 MU-M SEMICONDUCTOR-LASERS [J].