Transport in random quantum dot superlattices

被引:22
作者
Gómez, I [1 ]
Domínguez-Adame, F
Diez, E
Orellana, P
机构
[1] Univ Complutense, GISC, Dept Fis Mat, E-28040 Madrid, Spain
[2] Univ Catolica Norte, Dept Fis, Antofagasta, Chile
关键词
D O I
10.1063/1.1503393
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a model based on the two-dimensional transfer matrix formalism to calculate single-electron states in a random wide-gap semiconductor quantum dot superlattice. With a simple disorder model both the random arrangement of quantum dots (configurational disorder) and the spatial inhomogeneities of their shape (morphological disorder) are considered. The model correctly describes channel mixing and broadening of allowed energy bands due to elastic electron scattering by disorder. (C) 2002 American Institute of Physics.
引用
收藏
页码:4486 / 4489
页数:4
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