Observation of inter-sub-level transitions in modulation-doped Ge quantum dots

被引：29

作者：

Liu, JL ^{[1
]}

Wu, WG ^{[1
]}

Balandin, A ^{[1
]}

Jin, G ^{[1
]}

Luo, YH ^{[1
]}

Thomas, SG ^{[1
]}

Lu, Y ^{[1
]}

Wang, KL ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 12期

关键词：

D O I：

10.1063/1.124806

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The inter-sub-level transitions in modulation-doped Ge quantum dots are observed. The dot structure is grown by molecular-beam epitaxy, and consists of 30 periods of Ge quantum dots sandwiched by two 6 nm boron-doped Si layers. An absorption peak in the midinfrared range is observed at room temperature by Fourier transform infrared spectroscopy, which is attributed to the transitions between the first two heavy-hole states of the Ge quantum dots. This study suggests the possible use of modulation-doped Ge quantum dots for improved infrared detector applications. (C) 1999 American Institute of Physics. [S0003- 6951(99)01338-8].

引用

页码：1745 / 1747

页数：3

共 13 条

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