White light electroluminescence from PSi devices capped with poly(thiophene)(s) as top contact

被引：19

作者：

Lara, JA ^{[1
]}

Kathirgamanathan, P ^{[1
]}

机构：

[1] S Bank Univ, Sch EEIE, Ctr Elect Mat Engn, London SE1 0AA, England

来源：

SYNTHETIC METALS | 2000年 / 110卷 / 03期

关键词：

white light electroluminescence; polymer-capped; PSi devices;

D O I：

10.1016/S0379-6779(99)00297-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

For the first time, electrochemically deposited poly(3-methylthiophene) and chemically produced poly(3-methylthiophene) and poly(3-phenoxymethylthiophene) have been employed as top electrical contact on porous silicon light-emitting devices. The polymer-capped devices emitted white light as opposed to the uncapped devices, which emitted orange colour. The polymer-capped devices show much higher rectification ratio (up to 1 X 10(5)) as opposed to 1 X 10(3) for the uncapped devices at +/- 10 V. The polymer-capped devices show 10(3)-10(4)-fold improvement in the luminous efficiency over the uncapped devices. Electrochemically deposited poly(3-methylthiophene) top contacts give a luminous efficiency of 8 x 10(-5) lm W-1 as opposed to 3 X 10(-9) lm W-1 obtained from uncapped devices. All the devices were found to fit the space charge limited current model. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：233 / 240

页数：8

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