Visible electroluminescence from a polyaniline-porous silicon junction

被引：23

作者：

Halliday, DP

Eggleston, JM

Adams, PN

Pentland, IA

Monkman, AP

机构：

来源：

SYNTHETIC METALS | 1997年 / 85卷 / 1-3期

关键词：

organic/inorganic interfaces; polyaniline; light sources;

D O I：

10.1016/S0379-6779(97)80223-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the interface formed between a p-type conducting polyaniline layer and an n-type porous silicon wafer, The contact has rectifying behaviour demonstrated clearly by the IV curves, We can fit our data to a simple Schottky barrier model. The barrier height determined from our data varies from 0.78 to 0.85eV. The ideality factor ranges from 2.8 - 5.2. Visible electroluminescence has been obtained from this junction when it is placed under a forward bias.

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页码：1245 / 1246

页数：2

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