InN as THz Emitter excited at 1060 nm and 800 nm

被引：12

作者：

Pradarutti, Boris ^{[1
]}

Matthaeus, Gabor ^{[2
]}

Brueckner, Claudia ^{[1
]}

Riehemann, Stefan ^{[1
]}

Notni, Gunther ^{[1
]}

Nolte, Stefan ^{[2
]}

Cimalla, Volker ^{[3
]}

Lebedev, Vadim ^{[3
]}

Ambacher, Oliver ^{[3
]}

Tuennermann, Andreas ^{[1
,2
]}

机构：

[1] Frunhofer IOF, Albert Einstein Str 7, D-07745 Jena, Germany

[2] Inst Appl Phys, D-07743 Jena, Germany

[3] Inst Micro & Nanotechnol, D-98693 Ilmenau, Germany

来源：

MILLIMETER-WAVE AND TERAHERTZ PHOTONICS | 2006年 / 6194卷

关键词：

THz; surface emitter; ultrafast laser;

D O I：

10.1117/12.662301

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InN, a novel semiconductor material, is used as THz surface emitter. The material is irradiated with fs-laser pulses at 1060 nm and 800 nm and the emitted ultrashort THz pulses are measured by phase sensitive detection. Pulsforms, amplitudes and spectra are compared to the THz emission of p-doped InAs, the standard material for THz surface emission.

引用

页数：9

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