Polymer field-effect transistor gated via a poly(styrenesulfonic acid) thin film

被引：88

作者：

Said, Elias ^{[1
]}

Crispin, Xavier ^{[1
]}

Herlogsson, Lars ^{[1
]}

Elhag, Sami ^{[1
]}

Robinson, Nathaniel D. ^{[1
]}

Berggren, Magnus ^{[1
]}

机构：

[1] Linkoping Univ, ITN, SE-60174 Norrkoping, Sweden

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 14期

关键词：

ACTIVE-MATRIX DISPLAYS; CHARGE-TRANSPORT; DIELECTRICS;

D O I：

10.1063/1.2358315

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A polyanionic proton conductor, named poly(styrenesulfonic acid) (PSSH), is used to gate an organic field-effect transistor (OFET) based on poly(3-hexylthiophene) (P3HT). Upon applying a gate bias, large electric double layer capacitors (EDLCs) are formed quickly at the gate-PSSH and P3HT-PSSH interfaces due to proton migration in the polyelectrolyte. This type of robust transistor, called an EDLC-OFET, displays fast response (< 1 ms) and operates at low voltages (< 1 V). The results presented are relevant for low-cost printed polymer electronics. (c) 2006 American Institute of Physics.

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页数：3

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