Effects of Nb doping on thermoelectric properties of Zn4Sb3 at high temperatures

被引：37

作者：

Li, D. ^{[1
]}

Hng, H. H. ^{[1
]}

Ma, J. ^{[1
]}

Qin, X. Y. ^{[2
]}

机构：

[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

[2] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China

来源：

JOURNAL OF MATERIALS RESEARCH | 2009年 / 24卷 / 02期

基金：

中国国家自然科学基金;

关键词：

BETA-ZN4SB3;

D O I：

10.1557/JMR.2009.0058

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The thermoelectric properties of Nb-doped Zn4Sb3 compounds, (Zn1-xNbx)(4)Sb-3 (x = 0, 0.005, and 0.01), were investigated at temperatures ranging from 300 to 685 K. The results showed that by substituting Zn with Nb, the thermal conductivities of all the Nb-doped compounds were lower than that of the pristine beta-Zn4Sb3. Among the compounds studied, the lightly substituted (Zn0.995Nb0.005)(4)Sb-3 compound exhibited the best thermoelectric performance due to the improvement in both its electrical resistivity and thermal conductivity. Its figure of merit, ZT, was greater than the undoped Zn4Sb3 compound for the temperature range investigated. In particular, the ZT of (Zn0.995Nb0.005)(4)Sb-3 reached a value of 1.1 at 680 K, which was 69% greater than that of the undoped Zn4Sb3 obtained in this study.

引用

页码：430 / 435

页数：6

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