Mechanisms of mound coarsening in unstable epitaxial growth

被引:51
作者
Amar, JG [1 ]
机构
[1] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA
关键词
D O I
10.1103/PhysRevB.60.R11317
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Corner diffusion is shown to play a crucial role in determining the asymptotic mound coarsening exponent in in the case of unstable epitaxial growth on (001) and (111) surfaces. For the case of island-relaxation without corner diffusion the asymptotic exponent is found to satisfy n similar or equal to 1/4. However, when rapid corner-diffusion is allowed, the coarsening exponent is found to approach 1/3. An explanation for these results is presented in terms of the effects of corner diffusion on the surface current and mound morphology. [S0163-1829(99)51440-9].
引用
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页码:11317 / 11320
页数:4
相关论文
共 27 条
[1]   Determination of scaling exponents in Ag(100) homoepitaxy with x-ray diffraction profiles [J].
Alvarez, J ;
Lundgren, E ;
Torrelles, X ;
Ferrer, S .
PHYSICAL REVIEW B, 1998, 57 (11) :6325-6328
[2]   Step-adatom attraction as a new mechanism for instability in epitaxial growth [J].
Amar, JG ;
Family, F .
PHYSICAL REVIEW LETTERS, 1996, 77 (22) :4584-4587
[3]   Effects of crystalline microstructure on epitaxial growth [J].
Amar, JG ;
Family, F .
PHYSICAL REVIEW B, 1996, 54 (20) :14742-14753
[4]   Low-symmetry diffusion barriers in homoepitaxial growth of Al(111) [J].
Bogicevic, A ;
Stromquist, J ;
Lundqvist, BI .
PHYSICAL REVIEW LETTERS, 1998, 81 (03) :637-640
[5]   ATOMIC VIEW OF SURFACE SELF-DIFFUSION - TUNGSTEN ON TUNGSTEN [J].
EHRLICH, G ;
HUDDA, FG .
JOURNAL OF CHEMICAL PHYSICS, 1966, 44 (03) :1039-&
[6]   Temperature and orientation dependence of kinetic roughening during homoepitaxy: A quantitative X-ray-scattering study of Ag [J].
Elliott, WC ;
Miceli, PF ;
Tse, T ;
Stephens, PW .
PHYSICAL REVIEW B, 1996, 54 (24) :17938-17942
[7]   OBSERVATION OF A GROWTH INSTABILITY DURING LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY [J].
ERNST, HJ ;
FABRE, F ;
FOLKERTS, R ;
LAPUJOULADE, J .
PHYSICAL REVIEW LETTERS, 1994, 72 (01) :112-115
[8]   LOW-TEMPERATURE EPITAXIAL-GROWTH OF THIN METAL-FILMS [J].
EVANS, JW ;
SANDERS, DE ;
THIEL, PA ;
DEPRISTO, AE .
PHYSICAL REVIEW B, 1990, 41 (08) :5410-5413
[9]   STABLE AND UNSTABLE GROWTH IN MOLECULAR-BEAM EPITAXY [J].
JOHNSON, MD ;
ORME, C ;
HUNT, AW ;
GRAFF, D ;
SUDIJONO, J ;
SANDER, LM ;
ORR, BG .
PHYSICAL REVIEW LETTERS, 1994, 72 (01) :116-119
[10]   Growth anisotropy and pattern formation in metal epitaxy [J].
Jorritsma, LC ;
Bijnagte, M ;
Rosenfeld, G ;
Poelsema, B .
PHYSICAL REVIEW LETTERS, 1997, 78 (05) :911-914