Diffusion plasma chemical vapour deposition yielding freestanding individual single-walled carbon nanotubes on a silicon-based flat substrate

被引：30

作者：

Kato, Toshiaki ^{[1
]}

Hatakeyama, Rikizo

Tohji, Kazuyuki

机构：

[1] Tohoku Univ, Dept Elect Engn, Sendai, Miyagi 9808579, Japan

[2] Tohoku Univ, Grad Sch Environm Studies, Sendai, Miyagi 9808579, Japan

来源：

NANOTECHNOLOGY | 2006年 / 17卷 / 09期

关键词：

D O I：

10.1088/0957-4484/17/9/025

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Isolated freestanding single-walled carbon nanotubes (SWNTs) have been successfully produced on silicon-based flat substrates using diffusion plasma-enhanced chemical vapour deposition. The quantitative effects of plasma parameters, such as ion density and sheath electric field, on the growth and tube alignments of freestanding SWNTs are discussed on the basis of Langmuir probe measurements and simple calculations.

引用

页码：2223 / 2226

页数：4

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