X-ray photoelectron spectroscopy studies of post-oxidation process effects on oxide/SiC interfaces

被引：6

作者：

Hijikata, Y

Yaguchi, H

Yoshikawa, M

Yoshida, S

机构：

[1] Saitama Univ, Urawa, Saitama 3388570, Japan

[2] Japan Atom Energy Res Inst, Takasaki, Gumma 3701292, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

bond; post-oxidation annealing; re-oxidation; SiC-MOSFETs; slope-shaped oxide film; x-ray photoelectron spectroscopy;

D O I：

10.4028/www.scientific.net/MSF.389-393.1033

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this report, we carried out x-ray photoclectron spectroscopy measurements on slope shaped oxide films to explore the changes of interfacial structures by post oxidation processes. By the observation of Si2p, C1s and O1s spectra, the bonding states which influence the electrical properties of MOS structures were suggested to be bonds related to carbon. We also discuss the reasons for the improvement of MOS properties by these post oxidation processes.

引用

页码：1033 / 1036

页数：4

共 7 条

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[2]

2-F

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