Composition analysis of SiO2/SiC interfaces by electron spectroscopic measurements using slope-shaped oxide films

被引：123

作者：

Hijikata, Y

Yaguchi, H

Yoshikawa, M

Yoshida, S

机构：

[1] Saitama Univ, Dept Elect & Elect Syst Engn, Fac Engn, Urawa, Saitama 3388570, Japan

[2] Japan Atom Energy Res Inst, Takasaki Radiat Chem Res Estab, Takasaki, Gumma 3701292, Japan

来源：

APPLIED SURFACE SCIENCE | 2001年 / 184卷 / 1-4期

关键词：

6H-SiC; oxidation; slope-shaped oxide film; SiO2/SiC interface; XPS; bonding;

D O I：

10.1016/S0169-4332(01)00491-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have characterized SiO2/SiC interfaces by X-ray photoelectron spectroscopy in terms of composition and bonds to clarify the reasons for the problems in silicon carbide metal-oxide-semiconductor field-effect-transistor and MOS structures. The oxide films on 6H-SiC were shaped into slopes by HF chemical etching to obtain the depth profile of the composition and the bondings. An interface layer was found near the SiO2/SiC boundary, where SiO2 stoichiometry is collapsed and there exists the bondings other than Si-O-2 and Si-C. Also, we revealed the differences in the interface properties for different oxidation processes. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：161 / 166

页数：6

共 20 条

[1]

Afanas'ev VV, 1997, PHYS STATUS SOLIDI A, V162, P321, DOI 10.1002/1521-396X(199707)162:1<321::AID-PSSA321>3.0.CO

[2]

2-F

[3] Band offsets and electronic structure of SiC/SiO2, interfaces [J].