Interface state density at implanted 6H-SiC/SiO2 MOS structures

Accepters (boron or aluminum ions) smd donors (nitrogen ions) as well as, for comparison, inert neon ions are implanted into a surface-near region of n-/p-type SiC epitaxial layers. Subsequently these implanted layers are thermally oxidized to form SiC/SiO2 structures. The effect of implantation damage and/or of implanted dopants on the density of electrically active states at the SiC/SiO2 interface is studied, It turns out that the interface state density is only marginal sensitive to implantation damage and to the implanted dopants as well as that the nature of interface states is largely intrinsic.