Inter-edge-mode scattering in a high-mobility strained silicon two-dimensional electron system

被引：8

作者：

Griffin, N

Dunford, RB

Pepper, M

Robbins, DJ

Churchill, AC

Leong, WY

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[2] Def Evaluat & Res Agcy, Elect Sector, Malvern WR14 3PS, Worcs, England

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2000年 / 12卷 / 08期

关键词：

D O I：

10.1088/0953-8984/12/8/323

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The magnetoresistances of two-dimensional electron systems in strained silicon on a relaxed silicon-germanium buffer have been measured at low temperatures (50 mK). Samples, with Hall mobilities up to 3.61 x 10(5) cm(2) V-1 s(-1),have shown a marked asymmetry between adjacent Shubnikov-de Haas peaks and a prominent overshoot on the low-field side of the odd-filling-factor quantum Hall plateaux. This effect persisted to unusually small magnetic fields. It is argued that both of these phenomena can be explained by a strong back-scattering of multiple edge modes which is suppressed at integer filling factors.

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页码：1811 / 1818

页数：8

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