FQHE STATES OF HIGH-MOBILITY N-SI/SI1-XGEX HETEROSTRUCTURES IN PULSED MAGNETIC-FIELDS

被引：15

作者：

DUNFORD, RB ^{[1
]}

NEWBURY, R ^{[1
]}

FANG, FF ^{[1
]}

CLARK, RG ^{[1
]}

STARRETT, RP ^{[1
]}

CHU, JO ^{[1
]}

ISMAIL, KE ^{[1
]}

MEYERSON, BS ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

SOLID STATE COMMUNICATIONS | 1995年 / 96卷 / 02期

关键词：

D O I：

10.1016/0038-1098(95)00400-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Low temperature (mK) magneto-transport measurements of high quality n-type modulation-doped Si/Si0.7Ge0.3 heterostructures have been extended to high magnetic fields (50T) and low temperatures (40mK). For the high mobility electrons confined to 2D in the biaxially tensile strained Si layer, a two-valley system, signatures of the fractional quantum Hall effect (FQHE) in the Landau level filling factor region v < 1 (one valley occupied, lowest spin state) usually observed in GaAs are replicated out to v = 2/5 at B similar to 48T. For 1 < v < 2 however, (both valleys occupied, lowest spin state), prominent FQHE states such as v = 5/3 are absent, similar to the case in double layer GaAs systems. Tilted field experiments demonstrate that the valley splitting depends only on the normal field component.

引用

页码：57 / 60

页数：4

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