The effect of alcohol additives on etching characteristics in KOH solutions

被引:73
作者
Zubel, I [1 ]
Kramkowska, M [1 ]
机构
[1] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland
关键词
silicon anisotropic etching; alcohol additives; adsorption;
D O I
10.1016/S0924-4247(02)00265-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Different alcohol additives to KOH solution have been studied. It was stated that the alcohols result in changing silicon etching anisotropy. The alcohols with one hydroxyl group exhibited similar effect as isopropyl alcohol. They caused strong reduction of etch rates of (h h 1) type planes, usually developing at the side-walls of etched convex figures. This was the reason of the reduction of convex corner undercut. The alcohols with more than one hydroxyl group did not influence the etching anisotropy and caused deterioration of surface finish. The connection of alcohol properties with (h h 1) etch rate reduction have been analysed. It has been stated that the advantageous effect of the alcohols from propanol and butanol groups is connected with their low surface tension. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:255 / 261
页数:7
相关论文
共 11 条
[1]   The adsorption of alcohols on hydroxylated Si(100)-2x1 [J].
Bitzer, T ;
Richardson, NV ;
Schiffrin, DJ .
SURFACE SCIENCE, 1997, 382 (1-3) :L686-L689
[2]   INHIBITION OF PYRAMID FORMATION IN THE ETCHING OF SI P[100] IN AQUEOUS POTASSIUM HYDROXIDE-ISOPROPANOL [J].
CAMPBELL, SA ;
COOPER, K ;
DIXON, L ;
EARWAKER, R ;
PORT, SN ;
SCHIFFRIN, DJ .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1995, 5 (03) :209-218
[3]   Roughening and smoothing dynamics during KOH silicon etching [J].
Divan, R ;
Moldoven, N ;
Camon, H .
SENSORS AND ACTUATORS A-PHYSICAL, 1999, 74 (1-3) :18-23
[4]   Anisotropic etching of silicon in a complexant redox alkaline system [J].
Moldovan, C ;
Iosub, R ;
Dascalu, D ;
Nechifor, G .
SENSORS AND ACTUATORS B-CHEMICAL, 1999, 58 (1-3) :438-449
[5]   Anisotropic etching of {100} and {110} planes in (100) silicon [J].
Powell, O ;
Harrison, HB .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2001, 11 (03) :217-220
[6]   Characterization of orientation-dependent etching properties of single-crystal silicon: effects of KOH concentration [J].
Sato, K ;
Shikida, M ;
Matsushima, Y ;
Yamashiro, T ;
Asaumi, K ;
Iriye, Y ;
Yamamoto, M .
SENSORS AND ACTUATORS A-PHYSICAL, 1998, 64 (01) :87-93
[7]   A generalized model describing corner undercutting by the experimental analysis of TMAH/IPA [J].
Trieu, HK ;
Mokwa, W .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1998, 8 (02) :80-83
[8]   The effect of isopropyl alcohol on etching rate and roughness of (100) Si surface etched in KOH and TMAH solutions [J].
Zubel, I ;
Kramkowska, M .
SENSORS AND ACTUATORS A-PHYSICAL, 2001, 93 (02) :138-147
[9]   The influence of atomic configuration of (h k l) planes on adsorption processes associated with anisotropic etching of silicon [J].
Zubel, I .
SENSORS AND ACTUATORS A-PHYSICAL, 2001, 94 (1-2) :76-86
[10]   Silicon anisotropic etching in alkaline solutions III: On the possibility of spatial structures forming in the course of Si(100) anisotropic etching in KOH and KOH plus IPA solutions [J].
Zubel, I .
SENSORS AND ACTUATORS A-PHYSICAL, 2000, 84 (1-2) :116-125