Silicon anisotropic etching in alkaline solutions III: On the possibility of spatial structures forming in the course of Si(100) anisotropic etching in KOH and KOH plus IPA solutions

被引：86

作者：

Zubel, I ^{[1
]}

机构：

[1] Wroclaw Tech Univ, Inst Microsyst Technol, PL-50372 Wroclaw, Poland

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2000年 / 84卷 / 1-2期

关键词：

anisotropic etching; silicon; 3D structures;

D O I：

10.1016/S0924-4247(99)00347-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The formation of 3D structures on Si(100) wafers by means of anisotropic etching results from the inter-dependences of (100) plane etching rates and basic high-indexed planes. The shapes of the figures obtained under anisotropic etching (holes or islands Limited by the planes inclined to the surface at various well-defined angles) are considered in comparison with the etching rate values of various crystallographic planes. The best etchants and etching conditions for the formation of figures of the desired shape are presented in this paper. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：116 / 125

页数：10

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