Deposition of copper films by an alternate supply of CuCl and Zn

被引：56

作者：

Juppo, M ^{[1
]}

Ritala, M ^{[1
]}

Leskela, M ^{[1
]}

机构：

[1] UNIV HELSINKI,DEPT CHEM,FIN-00014 HELSINKI,FINLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1997年 / 15卷 / 04期

关键词：

D O I：

10.1116/1.580743

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Deposition of copper thin films by an alternate supply of CuCl and Zn was examined. Due to a reversible dissolution of Zn into the Cu film, no self-limiting growth characteristic for the atomic layer epitaxy method could be achieved. The resulting films contained about 3 at. % zinc while chlorine residue contents were below 0.5 at. %. The films were polycrystalline consisting of rather coarse grains. (C) 1997 American Vacuum Society.

引用

页码：2330 / 2333

页数：4

共 22 条

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