Crystal plasticity in Cu damascene interconnect lines undergoing electromigration as revealed by synchrotron x-ray microdiffraction

被引:83
作者
Budiman, A. S. [1 ]
Nix, W. D.
Tamura, N.
Valek, B. C.
Gadre, K.
Maiz, J.
Spolenak, R.
Patel, J. R.
机构
[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA
[3] Intel Corp, Hillsboro, OR 97124 USA
[4] ETH, Dept Mat, CH-8093 Zurich, Switzerland
[5] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
关键词
D O I
10.1063/1.2210451
中图分类号
O59 [应用物理学];
学科分类号
摘要
Plastic deformation was observed in damascene Cu interconnect test structures during an in situ electromigration experiment and before the onset of visible microstructural damage (voiding, hillock formation). We show here, using a synchrotron technique of white beam x-ray microdiffraction, that the extent of this electromigration-induced plasticity is dependent on the linewidth. In wide lines, plastic deformation manifests itself as grain bending and the formation of subgrain structures, while only grain rotation is observed in the narrower lines. The deformation geometry leads us to conclude that dislocations introduced by plastic flow lie predominantly in the direction of electron flow and may provide additional easy paths for the transport of point defects. Since these findings occur long before any observable voids or hillocks are formed, they may have direct bearing on the final failure stages of electromigration. (c) 2006 American Institute of Physics.
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页数:3
相关论文
共 11 条
[1]   A high-voltage scanning electron microscopy system for in situ electromigration testing [J].
Doan, JC ;
Lee, S ;
Lee, SH ;
Meier, NE ;
Bravman, JC ;
Flinn, PA ;
Marieb, TN ;
Madden, MC .
REVIEW OF SCIENTIFIC INSTRUMENTS, 2000, 71 (07) :2848-2854
[2]   High-performance interconnects: An integration overview [J].
Havemann, RH ;
Hutchby, JA .
PROCEEDINGS OF THE IEEE, 2001, 89 (05) :586-601
[3]  
*INT SEMATECH, 2004, ITRS UPD INT
[4]  
KUAN TS, 2000, MAT RES SOC S P, V612
[5]   In situ SEM observation of electromigration phenomena in fully embedded copper interconnect structures [J].
Meyer, MA ;
Herrmann, M ;
Langer, E ;
Zschech, E .
MICROELECTRONIC ENGINEERING, 2002, 64 (1-4) :375-382
[6]  
Spolenak R, 2002, AIP CONF PROC, V612, P217, DOI 10.1063/1.1469906
[7]   Scanning X-ray microdiffraction with submicrometer white beam for strain/stress and orientation mapping in thin films [J].
Tamura, N ;
MacDowell, AA ;
Spolenak, R ;
Valek, BC ;
Bravman, JC ;
Brown, WL ;
Celestre, RS ;
Padmore, HA ;
Batterman, BW ;
Patel, JR .
JOURNAL OF SYNCHROTRON RADIATION, 2003, 10 :137-143
[8]   Recent advances on electromigration in very-large-scale-integration of interconnects [J].
Tu, KN .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (09) :5451-5473
[9]   In situ observation of electromigration-induced void migration in dual-damascene Cu interconnect structures [J].
Vairagar, AV ;
Mhaisalkar, SG ;
Krishnamoorthy, A ;
Tu, KN ;
Gusak, AM ;
Meyer, MA ;
Zschech, E .
APPLIED PHYSICS LETTERS, 2004, 85 (13) :2502-2504
[10]   Electromigration-induced plastic deformation in passivated metal lines [J].
Valek, BC ;
Bravman, JC ;
Tamura, N ;
MacDowell, AA ;
Celestre, RS ;
Padmore, HA ;
Spolenak, R ;
Brown, WL ;
Batterman, BW ;
Patel, JR .
APPLIED PHYSICS LETTERS, 2002, 81 (22) :4168-4170