Mechanism of current leakage through metal/n-GaN interfaces

被引：74

作者：

Oyama, S ^{[1
]}

Hashizume, T ^{[1
]}

Hasegawa, H ^{[1
]}

机构：

[1] Hokkaido Univ, RCIQE, Grad Sch Elect & Informat Engn, Sapporo, Hokkaido 0608628, Japan

来源：

APPLIED SURFACE SCIENCE | 2002年 / 190卷 / 1-4期

关键词：

GaN; Schottky; leakage current; tunneling; thermionic-field emission; surface trap;

D O I：

10.1016/S0169-4332(01)00902-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Detailed current-voltage-temperature (I-V-T) measurements were performed on the Schottky diodes fabricated on MOVPE-grown n-GaN layers. A large deviation from the thermionic emission (TE) transport was observed in the reverse I-Vcurves with a large excess leakage. From the calculation based on the thermionic-field emission (TFE) model, it was found that the tunneling plays an important role in the carrier transport across the GaN Schottky barrier even for doping densities as low as 1 x 10(17) cm(-3). A novel barrier-modified TFE model based on presence of near-surface fixed charges or surface states is proposed to explain the observed large reverse leakage currents. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：322 / 325

页数：4

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