Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures

被引：76

作者：

Irisawa, T

Tokumitsu, S

Hattori, T

Nakagawa, K

Koh, S

Shiraki, Y

机构：

[1] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

[2] Musashi Inst Technol, Dept Elect Engn, Setagaya Ku, Tokyo 1588557, Japan

[3] Univ Yamanashi, Inst Inorgan Synth, Kofu, Yamanashi 4000021, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 05期

关键词：

D O I：

10.1063/1.1497725

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have obtained ultrahigh room-temperature (RT) hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures with very small parallel conduction. Reducing parallel conduction was achieved by employing Sb doping in Si0.3Ge0.7 buffer layers, which drastically increased RT hole Hall mobility up to 2100 cm(2)/V s in the strained Ge channel modulation-doped structures and improved device characteristics of the p-type metal-oxide-semiconductor field-effect transistors with the strained Ge channel. The peak effective mobility reached to 2700 cm(2)/V s at RT, which was much higher than the bulk Ge drift mobility. (C) 2002 American Institute of Physics.

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页码：847 / 849

页数：3

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