Channel width dependence of mobility in Ge channel modulation-doped structures

被引:30
作者
Irisawa, T [1 ]
Miura, H [1 ]
Ueno, T [1 ]
Shiraki, Y [1 ]
机构
[1] Univ Tokyo, Res Ctr Adv Sci & Technol, Meguro Ku, Tokyo 1538904, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 4B期
关键词
Ge channel; modulation-doped structure; mobility; channel width; strain relaxation;
D O I
10.1143/JJAP.40.2694
中图分类号
O59 [应用物理学];
学科分类号
摘要
We systematically studied channel width dependence of mobility in Ge channel modulation- doped structures fabricated by solid-source molecular beam epitaxy using the low-temperature buffer technique. This technique made it possible to obtain high-quality strain-relaxed Si1-xGex buffer layers having a very smooth surface (similar to5 nm). It was found that the mobility had a maximum around the channel width (W-ch) of 7.5 nm and that it reached 13000 cm(2)/Vs at 20 K and 1175 cm(2)/Vs at room temperature (RT). The decrease in mobility with decreasing channel width was attributed to interface roughness scattering, since its influence increased as W-ch decreased, On the other hand, the decrease in mobility for wider channels was considered to come from strain relaxation of Ge channel layers. In fact, Iii.-Ii-resolution X-ray diffraction measurements revealed that strain relaxation of Ge channel layers occurred in the sample with W-ch = 20 rim. By lowering the growth temperature of Cc channel layers to suppress the strain relaxation, the mobility of 1320 cm(2)/Vs at RT was achieved.
引用
收藏
页码:2694 / 2696
页数:3
相关论文
共 12 条
[1]   P-TYPE GE-CHANNEL MODFETS WITH HIGH TRANSCONDUCTANCE GROWN ON SI SUBSTRATES [J].
KONIG, U ;
SCHAFFLER, F .
IEEE ELECTRON DEVICE LETTERS, 1993, 14 (04) :205-207
[2]   Relaxed Si0.7Ge0.3 layers grown on low-temperature Si buffers with low threading dislocation density [J].
Li, JH ;
Peng, CS ;
Wu, Y ;
Dai, DY ;
Zhou, JM ;
Mai, ZH .
APPLIED PHYSICS LETTERS, 1997, 71 (21) :3132-3134
[3]   ROOM-TEMPERATURE ELECTRON-MOBILITY IN STRAINED SI/SIGE HETEROSTRUCTURES [J].
NELSON, SF ;
ISMAIL, K ;
CHU, JO ;
MEYERSON, BS .
APPLIED PHYSICS LETTERS, 1993, 63 (03) :367-369
[4]   Low temperature characterization of modulation doped SiGe grown on bonded silicon-on-insulator [J].
Paul, DJ ;
Griffin, N ;
Amone, DD ;
Pepper, M ;
Emeleus, CJ ;
Phillips, PJ ;
Whall, TE .
APPLIED PHYSICS LETTERS, 1996, 69 (18) :2704-2706
[5]   Relaxed Ge0.9Si0.1 alloy layers with low threading dislocation densities grown on low-temperature Si buffers [J].
Peng, CS ;
Zhao, ZY ;
Chen, H ;
Li, JH ;
Li, YK ;
Guo, LW ;
Dai, DY ;
Huang, Q ;
Zhou, JM ;
Zhang, YH ;
Sheng, TT ;
Tung, CH .
APPLIED PHYSICS LETTERS, 1998, 72 (24) :3160-3162
[6]   MODULATION DOPING IN GE(X)SI(1-X)/SI STRAINED LAYER HETEROSTRUCTURES - EFFECTS OF ALLOY LAYER THICKNESS, DOPING SETBACK, AND CLADDING LAYER DOPANT CONCENTRATION [J].
PEOPLE, R ;
BEAN, JC ;
LANG, DV .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :846-850
[7]   Atomic-layer doping in Si1-xGex/Si/Si1-xGex heterostructures by two-step solid-phase epitaxy [J].
Sugii, N ;
Nakagawa, K ;
Yamaguchi, S ;
Miyao, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B) :2424-2426
[8]   Low temperature buffer growth for modulation doped SiGe/Ge/SiGe heterostructures with high hole mobility [J].
Ueno, T ;
Irisawa, T ;
Shiraki, Y ;
Uedono, A ;
Tanigawa, S .
THIN SOLID FILMS, 2000, 369 (1-2) :320-323
[9]   p-type Ge channel modulation doped heterostructures with very high room-temperature mobilities [J].
Ueno, T ;
Irisawa, T ;
Shiraki, Y .
PHYSICA E, 2000, 7 (3-4) :790-794
[10]   VERY HIGH-MOBILITY 2-DIMENSIONAL HOLE GAS IN SI/GEXSI1-X/GE STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].
XIE, YH ;
MONROE, D ;
FITZGERALD, EA ;
SILVERMAN, PJ ;
THIEL, FA ;
WATSON, GP .
APPLIED PHYSICS LETTERS, 1993, 63 (16) :2263-2264