ROOM-TEMPERATURE ELECTRON-MOBILITY IN STRAINED SI/SIGE HETEROSTRUCTURES

被引：98

作者：

NELSON, SF ^{[1
]}

ISMAIL, K ^{[1
]}

CHU, JO ^{[1
]}

MEYERSON, BS ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 03期

关键词：

D O I：

10.1063/1.110045

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on room-temperature electron transport measurements in modulation-doped strained Si/SiGe heterostructures, grown by ultrahigh-vacuum chemical vapor deposition. A high room-temperature mobility is expected in such samples because of the strain-induced splitting of the conduction band in the silicon channel. Record values of over 2600 cm2/V s have been measured, almost twice the theoretical maximum for relaxed silicon.

引用

页码：367 / 369

页数：3

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