COOPERATIVE GROWTH PHENOMENA IN SILICON GERMANIUM LOW-TEMPERATURE EPITAXY

被引：333

作者：

MEYERSON, BS

URAM, KJ

LEGOUES, FK

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 25期

关键词：

D O I：

10.1063/1.100206

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2555 / 2557

页数：3

共 12 条

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[2]

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APPLIED PHYSICS LETTERS, 1988, 52 (13) :1053-1055

[4] NONEQUILIBRIUM BORON DOPING EFFECTS IN LOW-TEMPERATURE EPITAXIAL SILICON FILMS [J].

MEYERSON, BS ;

LEGOUES, FK ;

NGUYEN, TN ;

HARAME, DL .

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[5] LOW-TEMPERATURE SILICON EPITAXY BY ULTRAHIGH-VACUUM CHEMICAL VAPOR-DEPOSITION [J].

MEYERSON, BS .

APPLIED PHYSICS LETTERS, 1986, 48 (12) :797-799

[6] LOW-TEMPERATURE SILICON EPITAXY BY HOT WALL ULTRAHIGH-VACUUM LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION TECHNIQUES - SURFACE OPTIMIZATION [J].

MEYERSON, BS ;

GANIN, E ;

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NGUYEN, TN .

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[7]

NGUYEN TN, 1986, INT EL DEV M, V86, P304

[8] MODULATION DOPING IN GEXSI1-X/SI STRAINED LAYER HETEROSTRUCTURES [J].

PEOPLE, R ;

BEAN, JC ;

LANG, DV ;

SERGENT, AM ;

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APPLIED PHYSICS LETTERS, 1984, 45 (11) :1231-1233

[9] OXYGEN-DOPED SI EPITAXIAL FILM (OXSEF) [J].

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[10]

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