LOW-TEMPERATURE SILICON EPITAXY BY HOT WALL ULTRAHIGH-VACUUM LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION TECHNIQUES - SURFACE OPTIMIZATION

被引：102

作者：

MEYERSON, BS

GANIN, E

SMITH, DA

NGUYEN, TN

机构：

[1] IBM, Yorktown Heights, NY, USA, IBM, Yorktown Heights, NY, USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 06期

关键词：

MULTIWAFER SYSTEM - SILICON EPITAXY - SURFACE OPTIMIZATION;

D O I：

10.1149/1.2108824

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1232 / 1235

页数：4

相关论文

共 12 条

[1] INTERACTION OF H2O WITH SI(111) AND (100) - CRITICAL CONDITIONS FOR THE GROWTH OF SIO2
GHIDINI, G
SMITH, FW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) : 2924 - 2928
[2] ANALYSIS OF SILICON CRYSTAL-GROWTH USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
HOTTIER, F
CADORET, R
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) : 245 - 258
[3] PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON VIA LPCVD .1. PROCESS CHARACTERIZATION
MEYERSON, BS
OLBRICHT, W
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) : 2361 - 2365
[4] LOW-PRESSURE SILICON EPITAXY
OGIRIMA, M
SAIDA, H
SUZUKI, M
MAKI, M
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) : 903 - 908
[5] PYROLYSIS OF MONOSILANE
PURNELL, JH
WALSH, R
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1966, 293 (1435) : 543 - &
[6] EFFECT OF TRACE AMOUNTS OF OXYGEN ON THE HCL ETCHING OF SILICON
RIJKS, HJ
BLOEM, J
GILING, LJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1979, 47 (03) : 397 - 404
[7] Robinson P. J., 1972, UNIMOLECULAR REACTIO
[8] ROENIGK KF, J ELCHEM SO
[9] REACTION OF OXYGEN WITH SI(111) AND (100) - CRITICAL CONDITIONS FOR THE GROWTH OF SIO2
SMITH, FW
GHIDINI, G
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : 1300 - 1306
[10] SRINIVASAN GR, 1981, SOLID STATE TECHNOL, V24, P101