PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON VIA LPCVD .1. PROCESS CHARACTERIZATION

被引：120

作者：

MEYERSON, BS ^{[1
]}

OLBRICHT, W ^{[1
]}

机构：

[1] CORNELL UNIV,ITHACA,NY 14853

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 10期

关键词：

D O I：

10.1149/1.2115258

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2361 / 2365

页数：5

共 17 条

[1] MONOSILYLPHOSPHINE FORMATION BY RAPID SILYLENE INSERTION IN THE IR PHOTOCHEMISTRY OF SIH4-PH3 MIXTURES [J].

BLAZEJOWSKI, J ;

LAMPE, FW .

JOURNAL OF PHOTOCHEMISTRY, 1982, 20 (01) :9-16

[2] KINETICS OF SILICON DEPOSITION ON SILICON BY PYROLYSIS OF SILANE - MASS-SPECTROMETRIC INVESTIGATION BY MOLECULAR-BEAM SAMPLING [J].

FARROW, RFC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (07) :899-907

[3]

FRITZ GZ, 1953, NATURFORSCH, V86, P771

[4] HIGH-QUALITY POLYSILICON BY AMORPHOUS LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].

HARBEKE, G ;

KRAUSBAUER, L ;

STEIGMEIER, EF ;

WIDMER, AE ;

KAPPERT, HF ;

NEUGEBAUER, G .

APPLIED PHYSICS LETTERS, 1983, 42 (03) :249-251

[5] SEMI-INSULATING POLYSILICON (SIPOS) DEPOSITION IN A LOW-PRESSURE CVD REACTOR .2. OXYGEN-CONTENT [J].

HITCHMAN, ML ;

WIDMER, AE .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (03) :501-509

[6] SEMI-INSULATING POLYSILICON (SIPOS) DEPOSITION IN A LOW-PRESSURE CVD REACTOR .1. GROWTH-KINETICS [J].

HITCHMAN, ML ;

KANE, J .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (03) :485-500

[7]

HITCHMAN ML, 1979, ELECTROCHEMICAL SOC, P59

[8] CHEMICAL VAPOR-DEPOSITION OF SILICON FILMS IN CAPILLARY LAYERS [J].

JANAI, M .

THIN SOLID FILMS, 1982, 91 (03) :211-216

[9] ARRHENIUS PARAMETERS FOR SILENE INSERTION REACTIONS [J].

JOHN, P ;

PURNELL, JH .

JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS I, 1973, 69 (08) :1455-1461

[10] RESISTIVITY OF LPCVD POLYCRYSTALLINE-SILICON FILMS [J].

KAMINS, TI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (05) :833-837

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