SEMI-INSULATING POLYSILICON (SIPOS) DEPOSITION IN A LOW-PRESSURE CVD REACTOR .2. OXYGEN-CONTENT

被引：29

作者：

HITCHMAN, ML ^{[1
]}

WIDMER, AE ^{[1
]}

机构：

[1] RCA LABS LTD,CH-8048 ZURICH,SWITZERLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 55卷 / 03期

关键词：

D O I：

10.1016/0022-0248(81)90107-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：501 / 509

页数：9

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