LOW-TEMPERATURE EPITAXIAL-GROWTH OF SILICON BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION

被引：12

作者：

MEAKIN, D

STOBBS, M

STOEMENOS, J

ECONOMOU, NA

机构：

[1] UNIV CAMBRIDGE,DEPT MAT SCI & MET,CAMBRIDGE CB2 3Q7,ENGLAND

[2] UNIV THESSALONIKI,DEPT PHYS,GR-54006 THESSALONIKI,GREECE

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 13期

关键词：

D O I：

10.1063/1.99208

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1053 / 1055

页数：3

共 12 条

[1]

DANTERROCHES C, 1983, P MICROSCOPY SEMICON, P23

[2]

DONAHUE TJ, 1986, J ELECTROCHEM SOC, V133, P413

[3]

KARAKOSTAS T, IN PRESS MATER SCI L

[4] STRUCTURAL STUDIES OF LOW-TEMPERATURE LOW-PRESSURE CHEMICAL DEPOSITED POLYCRYSTALLINE SILICON [J].

MEAKIN, D ;

STOEMENOS, J ;

MIGLIORATO, P ;

ECONOMOU, NA .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (11) :5031-5037

[5] PRESSURE-DEPENDENCE OF THE GROWTH OF POLYCRYSTALLINE SILICON BY LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION [J].

MEAKIN, D ;

PAPADOPOULOU, K ;

FRILIGKOS, S ;

STOEMENOS, J ;

MIGLIORATO, P ;

ECONOMOU, NA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06) :1547-1550

[6]

MEAKIN DB, 1987, P EUROPEAN CVD C ISR

[7] LOW-TEMPERATURE SILICON EPITAXY BY HOT WALL ULTRAHIGH-VACUUM LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION TECHNIQUES - SURFACE OPTIMIZATION [J].

MEYERSON, BS ;

GANIN, E ;

SMITH, DA ;

NGUYEN, TN .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) :1232-1235

[8]

Natsuaki N., 1985, Layered Structures and Interface Kinetics: Their Technology and Applications. US-Japan Seminar on `Solid Phase Epitaxy and Interface Kinetics', P137

[9] OXIDE-GROWTH ON ETCHED SILICON IN AIR AT ROOM-TEMPERATURE [J].

RAIDER, SI ;

FLITSCH, R ;

PALMER, MJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) :413-418

[10]

SMITH DJ, 1983, P MICROSCOPY SEMICON, P83

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