PRESSURE-DEPENDENCE OF THE GROWTH OF POLYCRYSTALLINE SILICON BY LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION

被引：20

作者：

MEAKIN, D ^{[1
]}

PAPADOPOULOU, K ^{[1
]}

FRILIGKOS, S ^{[1
]}

STOEMENOS, J ^{[1
]}

MIGLIORATO, P ^{[1
]}

ECONOMOU, NA ^{[1
]}

机构：

[1] ARISTOTLE UNIV THESSALONIKI,DEPT PHYS,GR-54006 THESSALONIKI,GREECE

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 06期

关键词：

D O I：

10.1116/1.583671

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1547 / 1550

页数：4

共 12 条

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[8] STRUCTURAL STUDIES OF LOW-TEMPERATURE LOW-PRESSURE CHEMICAL DEPOSITED POLYCRYSTALLINE SILICON [J].

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JOURNAL OF APPLIED PHYSICS, 1987, 61 (11) :5031-5037

[9]

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[10]

NAGASIMA N, 1977, J VAC SCI TECHNOL, V14, P54, DOI 10.1116/1.569304

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