PLASMA-ENHANCED DEPOSITION OF HIGH-QUALITY EPITAXIAL SILICON AT LOW-TEMPERATURES

被引：12

作者：

COMFORT, JH

REIF, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 24期

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D O I：

10.1063/1.98278

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2016 / 2018

页数：3

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[1] BULK-QUALITY BIPOLAR-TRANSISTORS FABRICATED IN LOW-TEMPERATURE (TDEP=800-DEGREES-C) EPITAXIAL SILICON
BURGER, WR
REIF, R
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (20) : 1447 - 1449
[2] AN OPTIMIZED INSITU ARGON SPUTTER CLEANING PROCESS FOR DEVICE QUALITY LOW-TEMPERATURE (T LESS-THAN-OR-EQUAL-TO 800-DEGREES-C) EPITAXIAL SILICON - BIPOLAR-TRANSISTOR AND PN JUNCTION CHARACTERIZATION
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[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) : 4255 - 4268
[3] SILICON SURFACE CLEANING BY LOW-DOSE ARGON-ION BOMBARDMENT FOR LOW-TEMPERATURE (750-DEGREES-C) EPITAXIAL SILICON DEPOSITION .1. PROCESS CONSIDERATIONS
COMFORT, JH
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REIF, R
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3388 - 3397
[4] INSITU ARSENIC DOPING OF EPITAXIAL SILICON AT 800-DEGREES-C BY PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION
COMFORT, JH
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[J]. APPLIED PHYSICS LETTERS, 1987, 51 (19) : 1536 - 1538
[5] SILICON EPITAXY AT 650-800-DEGREES-C USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION BOTH WITH AND WITHOUT PLASMA ENHANCEMENT
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2757 - 2765
[6] SILICON SURFACE CLEANING BY LOW-DOSE ARGON-ION BOMBARDMENT FOR LOW-TEMPERATURE (750-DEGREES-C) EPITAXIAL DEPOSITION .2. EPITAXIAL QUALITY
GARVERICK, LM
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[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3398 - 3404
[7] THE ROLE OF LOW-ENERGY ION-BOMBARDMENT DURING THE GROWTH OF EPITAXIAL TIN(100) FILMS BY REACTIVE MAGNETRON SPUTTERING - DEFECT FORMATION AND ANNIHILATION
HULTMAN, L
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GREENE, JE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 2162 - 2164
[8] EFFECT OF ION-BOMBARDMENT ON INITIAL-STAGES OF THIN-FILM GROWTH
MARINOV, M
[J]. THIN SOLID FILMS, 1977, 46 (03) : 267 - 274
[9] A QUANTITATIVE STUDY OF THE RELATIONSHIP BETWEEN INTERFACIAL CARBON AND LINE DISLOCATION DENSITY IN SILICON MOLECULAR-BEAM EPITAXY
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FINEGAN, SN
FELDMAN, LC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (01) : 214 - 216
[10] LOW-TEMPERATURE SILICON EPITAXY BY ULTRAHIGH-VACUUM CHEMICAL VAPOR-DEPOSITION
MEYERSON, BS
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (12) : 797 - 799